250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits Easy power control Integrated ES.
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
BLF6G13L(S)-250P(G)
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description BLF6G13L-250P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF6G13LS-250P (SOT11.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF6G13LS-250P |
Ampleon |
Power LDMOS transistor | |
2 | BLF6G13L-250P |
Ampleon |
Power LDMOS transistor | |
3 | BLF6G10-200RN |
Ampleon |
Power LDMOS transistor | |
4 | BLF6G10-45 |
NXP |
Power LDMOS Transistor | |
5 | BLF6G10L-40BRN |
NXP Semiconductors |
Power LDMOS transistor | |
6 | BLF6G10LS-135R |
NXP Semiconductors |
Power LDMOS transistor | |
7 | BLF6G10LS-200 |
NXP Semiconductors |
Power LDMOS transistor | |
8 | BLF6G10LS-200R |
NXP Semiconductors |
Power LDMOS transistor | |
9 | BLF6G10LS-200RN |
Ampleon |
Power LDMOS transistor | |
10 | BLF6G10S-45 |
NXP |
Power LDMOS Transistor | |
11 | BLF6G15L-500H |
Ampleon |
Power LDMOS transistor | |
12 | BLF6G15LS-250PBRN |
Ampleon |
Power LDMOS transistor |