BLF574XRS - NXP

BLF574XRS Power LDMOS transistor

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal f (MHz).

Features

 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications NXP Semiconductors BLF574XR; BLF574XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF574XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF574XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 .