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BLF573 - Ampleon

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BLF573 Power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should .

Features


 Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:  Average output power = 300 W  Power gain = 27.2 dB  Efficiency = 70 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF and VHF band)
 Compliant to Directive 2002/95/EC, regarding Restriction of Ha.

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Datasheet BLF573 - NXP Semiconductors BLF573

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the .

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