BLF573S - NXP Semiconductors

BLF573S HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be.

Features

„ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 % „ Easy power control „ Integrated ESD protection „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (HF and VHF band) „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ Industrial, scientific and medical applications „ Broadcast transmitter applications NXP Semiconductors BLF573; BLF573S HF / VHF power LDMOS tran.