BLD6G22LS-50 - NXP Semiconductors

BLD6G22LS-50 W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists o.

Features

„ Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: ‹ Average output power = 8 W ‹ Power gain = 13.3 dB ‹ Efficiency = 38 % „ Fully optimized integrated Doherty concept: ‹ integrated asymmetrical power splitter at input ‹ integrated power combiner ‹ peak biasing down to 0 V ‹ low junction temperature ‹ high efficiency NXP Semiconductors BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor „ „ „ „ „ „ Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matched .