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BLD6G22LS-50 |
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| Part Number | BLD6G22LS-50 |
| Manufacturer | Ampleon |
| Description | The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station application... |
| Features |
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 14 dB Efficiency = 40 % Fully optimized integrated Doherty concept: integrated asymmetrical power splitter at input integrated power combiner peak biasing down to 0 V low junction temperature high efficiency BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 100 % peak power tested for guaranteed output power capability Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of ma... |
| Document |
 BLD6G22LS-50 Data Sheet
PDF 0.98MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLD6G22LS-50 |
NXP Semiconductors |
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor |
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| 2 | BLD6G22L-50 |
NXP Semiconductors |
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor |
|
| 3 | BLD6G22L-50 |
Ampleon |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
|
| 4 | BLD6G21L-50 |
NXP Semiconductors |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
|
| 5 | BLD6G21LS-50 |
NXP Semiconductors |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
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