BL3N80 - GME

BL3N80 N-Channel Power Mosfet

2.5A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 19 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 11 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless ot.

Features

 RDS(ON) =3.8Ω@ VGS = 10V
 Ultra low gate charge ( typical 19 nC ) Pb Lead-free
 Low reverse transfer Capacitance ( CRSS = typical 11 pF )
 Fast switching capability
 Avalanche energy specified
 Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Am.