BL3N60 - GME

BL3N60 N-Channel Power Mosfet

3A,600V N-Channel Power Mosfet FEATURES  VDS = 600V , ID = 3A  RDS(ON) =3.6Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Ultra low gate charge ( typical 10 nC )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless.

Features

 VDS = 600V , ID = 3A
 RDS(ON) =3.6Ω@ VGS = 10V
 Ultra low gate charge ( typical 10 nC ) Pb Lead-free
 Ultra low gate charge ( typical 10 nC )
 Fast switching capability
 Avalanche energy specified
 Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resis.