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Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES Electrostatic Sensitive Devices. VDS (V) =- 20V ID = -3.5 A(VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect tra.
Electrostatic Sensitive Devices.
VDS (V) =- 20V
ID = -3.5 A(VGS = -4.5V)
RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor.
Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
BL3435
3435
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
-20
VGSS ID
IDM PD RθJA
Gate -Source voltage
±8
Continuous Drain CurrentA
@ TA = 25 ℃ @ TA = 70 ℃
Pulse.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BL3400 |
GME |
N-Channel Power Mosfet |
|
| 2 | BL3401 |
GME |
P-Channel High Density Trench MOSDET |
|
| 3 | BL34018 |
SHANGHAI BELLING |
high quality hands free speakerphone system |
|
| 4 | BL3401L |
GME |
P-Channel MOSDET |
|
| 5 | BL3402 |
GME |
N-Channel Power Mosfet |
|
| 6 | BL3404 |
GME |
N-Channel Power Mosfet |
|
| 7 | BL3406B |
SHANGHAI BELLING |
800mA Synchronous Buck Converter |
|
| 8 | BL3407 |
GME |
P-Channel Power Mosfet |
|
| 9 | BL34118 |
SHANGHAI BELLING |
Voice Switched Speakerphone Circuit |
|
| 10 | BL34119 |
SHANGHAI BELLING |
Telephone low voltage audio amplifier circuit |
|
| 11 | BL3415 |
GME |
Dual P-Channel Power Mosfet |
|
| 12 | BL3085A |
BELLING |
RS-485 Transceivers |
|