BL3400 - GME

BL3400 N-Channel Power Mosfet

Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.7A（VGS = 10V）  RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORD.

Features

 Electrostatic Sensitive Devices.
 VDS (V) = 30V
 ID = 5.7A（VGS = 10V）
 RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS
 N-channel enhancement mode effect transistor.
 Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 25 Power Dissip.