BL10N30 - GME

BL10N30 N-Channel Power Mosfet

Production specification N-Channel Power MOSFET BL10N30 FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Dra.

Features

 High switching speed.
 RDS(ON)=0.65Ω @ VGS=10V.
 100% avalanche tested.
 Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS
 N-Channel Power MOSFET.
 Switching Applications. TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 300 Unit V VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Power Dissipation TC=25℃ Derate above.