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BL10N30 |
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| Part Number | BL10N30 |
| Manufacturer | GME |
| Description | Production specification N-Channel Power MOSFET BL10N30 FEATURES High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very Good Manufacturing Reliabilty. Pb Lead-free APP... |
| Features |
High switching speed. RDS(ON)=0.65Ω @ VGS=10V. 100% avalanche tested. Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS N-Channel Power MOSFET. Switching Applications. TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 300 Unit V VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Power Dissipation TC=25℃ Derate above... |
| Document |
 BL10N30 Data Sheet
PDF 205.83KB |
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