BL10N65 - GME

BL10N65 N-Channel Power Mosfet

Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Capability.  100% AvalancheTtested.  Gate Charge Minimized.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-channel Enhancement mode Effect Transistor.  Switching Applications. TO-220AB MAXIMUM RATING operating temp.

Features

 Extremely High dv/dt Capability.
 100% AvalancheTtested.
 Gate Charge Minimized.
 Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS
 N-channel Enhancement mode Effect Transistor.
 Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate -Source Voltage ID Maximum Drain Current(continuous) at TC=25℃ TC=100℃ IDM Drain Current(pulsed)Note1 PD Power Dissipation at TC=25℃ Vesd(G-S) G-S ESD (HBM C=100pF,R=1.5kΩ) Single Pulse Avalanche Energy EAS.