2 Description The BGA728L7 is a low power low noise amplifier (LNA) MMIC for portable and mobile TV applications in the VHFIII-, UHF- and L-Bands. The low gain mode with much higher linearity enables this LNA to work with much lower current consumption than commonly used TV LNAs. The LNA is based upon Infineon Technologies cost effective B7HFM Silicon German.
• High gain mode: 15.75 dB gain
• Low gain mode: -5.2 dB gain
• Noise figure: 1.3 / 5.5 dB in high / low gain mode
• Power off function
• Operating frequency: 100 ~ 1700 MHz
• Supply voltage: 1.5 V to 3.6 V
• Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.4 mm³)
• Output internally matched to 50 Ω
• Input pre-matched to 50 Ω
• Low external component count
• Integrated ESD protection (1 kV HBM)
• Moisture sensitivity level: MSL 1
• Pb-free (RoHS compliant) package
65
4
7
12 3 TSLP-7-1
Applications
• Portable and mobile TV in VHFIII-, UHF- and L-bands
• ISM applications in 100... 1700 MHz
•.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGA725L6 |
Infineon |
Silicon Germanium Low Noise Amplifier | |
2 | BGA7024 |
NXP |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier | |
3 | BGA7027 |
NXP Semiconductors |
high linearity silicon amplifier | |
4 | BGA711N7 |
Infineon |
SiGe Bipolar 3G/3.5G/4G Single-Band LNA | |
5 | BGA7124 |
NXP |
high linearity silicon amplifier | |
6 | BGA7127 |
NXP |
high linearity silicon amplifier | |
7 | BGA7130 |
NXP |
high linearity silicon amplifier | |
8 | BGA713N7 |
Infineon |
Single-Band UMTS LNA | |
9 | BGA715N7 |
Infineon |
Silicon Germanium Low Noise Amplifier | |
10 | BGA734L16 |
Infineon |
Low Power Tri-Band UMTS LNA | |
11 | BGA7351 |
NXP |
high linearity Si variable gain amplifier | |
12 | BGA735N16 |
Infineon |
High Linearity Tri-Band LTE/UMTS LNA |