The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and superior performance up to 2700 MHz. Its power saving features include easy quiescent current adjustment enabling class-AB operation and logic-level shutdown control to reduce the supply current to 4 .
400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 25 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 3.3 V or 5 V single supply operation All pins ESD protected 1.3 Applications Wireless infrastructure (base station, repeater, backhaul systems) Broadband CPE/MoCA Industrial applications E-metering Satellite Master Antenna TV (SMATV) WLAN/ISM/RFID 1.4 Quick reference data Table 1. Quick reference data Input and output impedances mat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGA7127 |
NXP |
high linearity silicon amplifier | |
2 | BGA711N7 |
Infineon |
SiGe Bipolar 3G/3.5G/4G Single-Band LNA | |
3 | BGA7130 |
NXP |
high linearity silicon amplifier | |
4 | BGA713N7 |
Infineon |
Single-Band UMTS LNA | |
5 | BGA715N7 |
Infineon |
Silicon Germanium Low Noise Amplifier | |
6 | BGA7024 |
NXP |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier | |
7 | BGA7027 |
NXP Semiconductors |
high linearity silicon amplifier | |
8 | BGA725L6 |
Infineon |
Silicon Germanium Low Noise Amplifier | |
9 | BGA728L7 |
Infineon |
Broadband Low Noise Amplifier | |
10 | BGA734L16 |
Infineon |
Low Power Tri-Band UMTS LNA | |
11 | BGA7351 |
NXP |
high linearity Si variable gain amplifier | |
12 | BGA735N16 |
Infineon |
High Linearity Tri-Band LTE/UMTS LNA |