BGA318 - Siemens Semiconductor Group

BGA318 Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)

BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0043 Pin Configuration 1 RFout/bias 2 GND 3 RFinput Package .

Features

Ω) Insertion power gain |S21| 2 ∆ |S 21|2 18 16 12 +-0.7 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 3.5 4 5 12 14 10 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias ΙD RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group 22 C Block IN 1 C Block VD OUT RBias = VCC - VD / ID VD = 4.7V Sep-04-1998 1998-11-01 BGA 3.