BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.4 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0041 Pin Configuration Package BGA 310 BLs Maximum Ratings P.
50 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 10 9 8 +-0.5 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 6 6.5 7 9 20 15 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias ΙD RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group 22 C Block IN 1 C Block VD OUT RBias = VCC - VD / ID VD = 4.7V Sep-04-1998 1998-11-01 BGA 31.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGA312 |
Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) | |
2 | BGA318 |
Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) | |
3 | BGA3012 |
NXP Semiconductors |
1GHz 12dB gain wideband amplifier MMIC | |
4 | BGA3015 |
NXP |
1 GHz 15 dB gain wideband amplifier MMIC | |
5 | BGA3018 |
NXP |
1 GHz 18 dB gain wideband amplifier MMIC | |
6 | BGA3021 |
NXP |
1.2GHz 16dB gain CATV amplifier | |
7 | BGA3022 |
NXP |
1.2GHz 18dB gain CATV amplifier | |
8 | BGA3023 |
NXP |
1.2GHz 20dB gain CATV amplifier | |
9 | BGA123L4 |
Infineon |
Small Footprint Ultra Low Current Low Noise Amplifier | |
10 | BGA2001 |
NXP |
Silicon MMIC amplifier | |
11 | BGA2003 |
NXP |
Silicon MMIC amplifier | |
12 | BGA2012 |
NXP |
1900 MHz high linear low noise amplifier |