The BFP740F is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 21 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications •.
) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v3.0 2018-09-26 BFP740F SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP740 |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor | |
2 | BFP740 |
Kexin |
NPN Transistors | |
3 | BFP740ESD |
Infineon |
NPN Transistor | |
4 | BFP740FESD |
Infineon |
NPN Transistor | |
5 | BFP74F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor | |
6 | BFP719 |
ETC |
NPN Transistor | |
7 | BFP720 |
ETC |
NPN Transistor | |
8 | BFP720 |
Infineon |
Low Noise Silicon Germanium Bipolar RF Transistor | |
9 | BFP720ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
10 | BFP720F |
Infineon |
Low Noise Silicon Germanium Bipolar RF Transistor | |
11 | BFP720FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
12 | BFP721 |
ETC |
NPN Transistor |