BFP740ESD - Infineon

BFP740ESD NPN Transistor

The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits • NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms.

Features

ice information Table 1 Part information Product name / Ordering code BFP740ESD / BFP740ESDH6327XTSA1 Package SOT343 Pin Configuration Marking 1 = B 2 = E 3 = C 4 = E T7s Pieces / Reel 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .