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SMD Type NPN Transistors BFP740 (KFP740) Transistors ■ Features ● High gain ultra low noise RF transistor ● High maximum stable gain ● Gold metallization for extra high reliability ● 150 GHz fT-Silicon Germanium technology ● Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz SOT-343 2 ±0.2 1.3 4 3 1 0.3 +0..
● High gain ultra low noise RF transistor
● High maximum stable gain
● Gold metallization for extra high reliability
● 150 GHz fT-Silicon Germanium technology
● Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.85 dB at 6 GHz
SOT-343
2 ±0.2 1.3
4
3
1
0.3
+0.1 -0.05
4x 0.1 M
0.15
2
0.6
+0.1 -0.05
2.1 ±0.1 0.1 MIN.
1.25 ±0.1
Uint: mm
0.9 ±0.1 0.1 MAX.
0.1 A
0.15
+0.1 -0.05
0.2 M A
1 Base 3 Collector 2 Emitter 4 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Ta > .
BFP740 - Infineon Technologies AG
The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • Low noise figure NFmin = 0.85 d.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP740ESD |
Infineon |
NPN Transistor |
|
| 2 | BFP740F |
Infineon |
NPN Transistor |
|
| 3 | BFP740FESD |
Infineon |
NPN Transistor |
|
| 4 | BFP74F |
Infineon Technologies AG |
NPN Silicon Germanium RF Transistor |
|
| 5 | BFP719 |
ETC |
NPN Transistor |
|
| 6 | BFP720 |
ETC |
NPN Transistor |
|
| 7 | BFP720 |
Infineon |
Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 8 | BFP720ESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 9 | BFP720F |
Infineon |
Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 10 | BFP720FESD |
Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor |
|
| 11 | BFP721 |
ETC |
NPN Transistor |
|
| 12 | BFP722 |
ETC |
NPN Transistor |
|