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These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mod.
z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BF98N60 |
BYD |
N-Channel MOSFET |
|
| 2 | BF980 |
Signetics |
Silicon N-Channel Dual Gate MOS-FET |
|
| 3 | BF980A |
Signetics |
Silicon N-Channel Dual Gate MOS-FET |
|
| 4 | BF981 |
NXP |
SILICON N-CHANNEL DUAL GATE MOS-FET |
|
| 5 | BF982 |
ETC |
SILICON N-CHANNEL DUAL GATE MOS-FET |
|
| 6 | BF9864A |
Bolymin |
FSTN Transflective LCD |
|
| 7 | BF987 |
Siemens Semiconductor Group |
SILICON N CHANNEL MOSFET TRIODE |
|
| 8 | BF988 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 9 | BF989 |
NXP |
N-channel dual-gate MOS-FET |
|
| 10 | BF900 |
Inter Control |
Sicherungshalter |
|
| 11 | BF900 |
Siliconix |
n-channel dual gate MOSFET |
|
| 12 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs |
|