BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D.
D D D D Integrated gate protection diodes High cross modulation performance Low noise figure High gain 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 1 D BF988 Marking: BF988 Plastic case (TO 50) 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 12 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF980 |
Signetics |
Silicon N-Channel Dual Gate MOS-FET | |
2 | BF980A |
Signetics |
Silicon N-Channel Dual Gate MOS-FET | |
3 | BF981 |
NXP |
SILICON N-CHANNEL DUAL GATE MOS-FET | |
4 | BF982 |
ETC |
SILICON N-CHANNEL DUAL GATE MOS-FET | |
5 | BF9864A |
Bolymin |
FSTN Transflective LCD | |
6 | BF987 |
Siemens Semiconductor Group |
SILICON N CHANNEL MOSFET TRIODE | |
7 | BF989 |
NXP |
N-channel dual-gate MOS-FET | |
8 | BF98N60 |
BYD |
N-Channel MOSFET | |
9 | BF98N60L |
BYD |
N-Channel MOSFET | |
10 | BF900 |
Inter Control |
Sicherungshalter | |
11 | BF900 |
Siliconix |
n-channel dual gate MOSFET | |
12 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs |