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This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features z VDS =60 V z ID =60A .
z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability TO-252 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg Operating junction and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose （Note1） （Note2） （Note1） Value 60 60 240 ±20 215 38 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BF960NF06 |
BYD |
N-Channel MOSFET |
|
| 2 | BF960 |
Vishay Telefunken |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE |
|
| 3 | BF961 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 4 | BF961 |
New Jersey Semi-Conductor |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 5 | BF963 |
Siemens |
Silicon N-Channel MOSFET Tetrode |
|
| 6 | BF964 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 7 | BF964S |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 8 | BF965 |
Siemens |
Silicon N-Channel MOSFET Tetrode |
|
| 9 | BF966 |
Telefunken |
N-Channel Dual Gate MOS Fieldeffect Tetrod |
|
| 10 | BF966S |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 11 | BF967 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
|
| 12 | BF968 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
|