Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BF960NF06T |
Click to view a larger image
| Part Number | BF960NF06T |
| Manufacturer | BYD |
| Description | This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated D... |
| Features |
z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
TO-252
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg
Operating junction and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
（Note1）
（Note2） （Note1）
Value 60 60 240 ±20 215 38 1... |
| Document |
 BF960NF06T Data Sheet
PDF 201.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF960NF06 |
BYD |
N-Channel MOSFET |
|
| 2 | BF960 |
Vishay Telefunken |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE |
|
| 3 | BF961 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 4 | BF961 |
New Jersey Semi-Conductor |
N-Channel Dual Gate MOS-Fieldeffect Tetrode |
|
| 5 | BF963 |
Siemens |
Silicon N-Channel MOSFET Tetrode |
|