BF961 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 1.
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647
D High AGC-range D Low feedback capacitance D Low input capacitance
G2 G1 D
1
BF961 Marking: BF961 Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg
–55 to +150 Un.
<£e.mi-Condu.cioi ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF961 TELEPHONE: (973) 376-2922.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF960 |
Vishay Telefunken |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE | |
2 | BF960NF06 |
BYD |
N-Channel MOSFET | |
3 | BF960NF06T |
BYD |
N-Channel MOSFET | |
4 | BF963 |
Siemens |
Silicon N-Channel MOSFET Tetrode | |
5 | BF964 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode | |
6 | BF964S |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode | |
7 | BF965 |
Siemens |
Silicon N-Channel MOSFET Tetrode | |
8 | BF966 |
Telefunken |
N-Channel Dual Gate MOS Fieldeffect Tetrod | |
9 | BF966S |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode | |
10 | BF967 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR | |
11 | BF968 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR | |
12 | BF96N60 |
BYD |
N-Channel MOSFET |