DESCRIPTION NPN high-voltage transistor in a TO-126; SOT32 plastic package. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback cap.
• Low current (max. 100 mA)
• High voltage (max. 250 V). APPLICATIONS
• Driver for line output transistors in colour television receivers.
handbook, halfpage
BF419
PINNING PIN 1 2 3 emitter collector connected to mounting base base DESCRIPTION
DESCRIPTION NPN high-voltage transistor in a TO-126; SOT32 plastic package.
3
2
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedbac.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF410 |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
2 | BF410A |
NXP |
N-channel silicon field-effect transistors | |
3 | BF410A |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
4 | BF410B |
NXP |
N-channel silicon field-effect transistors | |
5 | BF410B |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
6 | BF410C |
NXP |
N-channel silicon field-effect transistors | |
7 | BF410C |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
8 | BF410D |
NXP |
N-channel silicon field-effect transistors | |
9 | BF410D |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
10 | BF414 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
11 | BF41A1M |
SHOULDER ELECTRONICS |
SAW filter | |
12 | BF401M |
LangTuo |
SMD Gas Discharge Tube |