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Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as th.
are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate BF410A to D handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BF410 |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR |
|
| 2 | BF410A |
NXP |
N-channel silicon field-effect transistors |
|
| 3 | BF410A |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR |
|
| 4 | BF410C |
NXP |
N-channel silicon field-effect transistors |
|
| 5 | BF410C |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR |
|
| 6 | BF410D |
NXP |
N-channel silicon field-effect transistors |
|
| 7 | BF410D |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR |
|
| 8 | BF414 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 9 | BF419 |
NXP |
NPN high-voltage transistor |
|
| 10 | BF41A1M |
SHOULDER ELECTRONICS |
SAW filter |
|
| 11 | BF401M |
LangTuo |
SMD Gas Discharge Tube |
|
| 12 | BF420 |
Motorola Inc |
High Voltage Transistors |
|
