BF 414 NPN Silicon RF Transistor q BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type BF 414 Marking – Ordering Code Q62702-F517 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 45 ˚C .
cteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 60 Ω fT
–
– Cce F
–
– 400 560 0.1 3
–
–
–
– pF dB MHz V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 30 40 4
– 30
–
–
–
– 80
–
–
– 60
– nA
– V Values typ. max. Unit
Semiconductor Group
2
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF410 |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
2 | BF410A |
NXP |
N-channel silicon field-effect transistors | |
3 | BF410A |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
4 | BF410B |
NXP |
N-channel silicon field-effect transistors | |
5 | BF410B |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
6 | BF410C |
NXP |
N-channel silicon field-effect transistors | |
7 | BF410C |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
8 | BF410D |
NXP |
N-channel silicon field-effect transistors | |
9 | BF410D |
Siemens Semiconductor Group |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR | |
10 | BF419 |
NXP |
NPN high-voltage transistor | |
11 | BF41A1M |
SHOULDER ELECTRONICS |
SAW filter | |
12 | BF401M |
LangTuo |
SMD Gas Discharge Tube |