LangTuo GDT Product Specification BF***M SMD Gas Discharge Tube(5×5×4.2mm) 1、FEATURES Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capability 5,000A @ 8/20μs Low Capacitance and Insertion Loss Fast Response and Long Service Life Reliable to Protect Electrostatic Surge Moisture sensitivi.
Surface Mounting Design UL Certificated E232249 Size Design EIA 2018 5×5×4.2mm High Current Handling Capability 5,000A @ 8/20μs Low Capacitance and Insertion Loss Fast Response and Long Service Life Reliable to Protect Electrostatic Surge Moisture sensitivity level:Level 1 WI-SP-MG-09-B2 2、AVAILABLE PART NUMBER AND ELECTRICAL PARAMETER Part Number DC Breakdown Tolerance Voltage① Impulse Spark-over Voltage Impulse Discharge Current② 100V/s④ of Vs 1kV/μs④ 8/20μs BF071M 70V ±20% ≤ 650V 5,000A BF091M 90V ±20% ≤650V 5,000A BF151M 150V ±20% ≤ 650V 5,000A BF201.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF1201 |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
2 | BF1201R |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
3 | BF1201WR |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
4 | BF1202 |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
5 | BF1202R |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
6 | BF1202WR |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
7 | BF1203 |
NXP |
Dual N-channel dual gate MOS-FET | |
8 | BF1204 |
NXP |
Dual N-channel dual gate MOS-FET | |
9 | BF1205 |
NXP |
Dual N-channel dual gate MOS-FET | |
10 | BF1205C |
NXP |
Dual N-channel dual gate MOS-FET | |
11 | BF1206 |
NXP |
Dual N-channel dual-gate MOS-FET | |
12 | BF1206F |
NXP |
Dual N-channel dual gate MOSFET |