The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated.
• Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
• Internal switch reduces the number of external components
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio. APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The BF1205 is a combination of two equal dual gate.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF1201 |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
2 | BF1201R |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
3 | BF1201WR |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
4 | BF1202 |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
5 | BF1202R |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
6 | BF1202WR |
NXP |
N-channel dual-gate PoLo MOS-FETs | |
7 | BF1203 |
NXP |
Dual N-channel dual gate MOS-FET | |
8 | BF1204 |
NXP |
Dual N-channel dual gate MOS-FET | |
9 | BF1205C |
NXP |
Dual N-channel dual gate MOS-FET | |
10 | BF1206 |
NXP |
Dual N-channel dual-gate MOS-FET | |
11 | BF1206F |
NXP |
Dual N-channel dual gate MOSFET | |
12 | BF1207 |
NXP Semiconductors |
Dual N-channel dual gate MOSFET |