BF1206F - NXP

BF1206F Dual N-channel dual gate MOSFET

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect agai.

Features

 Two low noise gain controlled amplifiers in a single package
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance ratio
 Suited for 3 volt applications 1.3 Applications
 Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners NXP Semiconductors BF1206F Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data Per MOSFET unless otherwise specified..