The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (.
Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF1210 |
NXP |
Dual N-channel dual gate MOSFET | |
2 | BF1211 |
ETC |
N-channel dual-gate MOS-FETs | |
3 | BF1211 |
Philips |
N-channel dual-gate MOS-FETs | |
4 | BF1211R |
ETC |
N-channel dual-gate MOS-FETs | |
5 | BF1211R |
Philips |
N-channel dual-gate MOS-FETs | |
6 | BF1211WR |
ETC |
N-channel dual-gate MOS-FETs | |
7 | BF1211WR |
Philips |
N-channel dual-gate MOS-FETs | |
8 | BF1212 |
NXP |
N-channel dual-gate MOS-FETs | |
9 | BF1212R |
NXP |
N-channel dual-gate MOS-FETs | |
10 | BF1212WR |
NXP |
N-channel dual-gate MOS-FETs | |
11 | BF1214 |
NXP Semiconductors |
Dual N-channel dual gate MOSFET | |
12 | BF1215 |
NXP |
Dual N-channel dual gate MOSFET |