The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input .
Two low noise gain controlled amplifiers in a single package; one with full internal bias and one with partial internal bias Superior cross modulation performance during AGC High forward transfer admittance to input capacitance ratio Suitable for VHF and UHF applications: both amplifiers are optimized for VHF applications. Internal switch reduces external components 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply Digital and analog television tuners Professional communication equipment www.DataSheet4U.com NXP Semiconductor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF1210 |
NXP |
Dual N-channel dual gate MOSFET | |
2 | BF1211 |
ETC |
N-channel dual-gate MOS-FETs | |
3 | BF1211 |
Philips |
N-channel dual-gate MOS-FETs | |
4 | BF1211R |
ETC |
N-channel dual-gate MOS-FETs | |
5 | BF1211R |
Philips |
N-channel dual-gate MOS-FETs | |
6 | BF1211WR |
ETC |
N-channel dual-gate MOS-FETs | |
7 | BF1211WR |
Philips |
N-channel dual-gate MOS-FETs | |
8 | BF1212 |
NXP |
N-channel dual-gate MOS-FETs | |
9 | BF1212R |
NXP |
N-channel dual-gate MOS-FETs | |
10 | BF1212WR |
NXP |
N-channel dual-gate MOS-FETs | |
11 | BF1214 |
NXP Semiconductors |
Dual N-channel dual gate MOSFET | |
12 | BF1216 |
NXP |
Dual N-channel dual gate MOSFET |