The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has.
I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio I Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF applications 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional communication equipment NXP Semiconductors BF1214 Dual N-channel dual gate MOSFET 1.4 Quick refer.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF1210 |
NXP |
Dual N-channel dual gate MOSFET | |
2 | BF1211 |
ETC |
N-channel dual-gate MOS-FETs | |
3 | BF1211 |
Philips |
N-channel dual-gate MOS-FETs | |
4 | BF1211R |
ETC |
N-channel dual-gate MOS-FETs | |
5 | BF1211R |
Philips |
N-channel dual-gate MOS-FETs | |
6 | BF1211WR |
ETC |
N-channel dual-gate MOS-FETs | |
7 | BF1211WR |
Philips |
N-channel dual-gate MOS-FETs | |
8 | BF1212 |
NXP |
N-channel dual-gate MOS-FETs | |
9 | BF1212R |
NXP |
N-channel dual-gate MOS-FETs | |
10 | BF1212WR |
NXP |
N-channel dual-gate MOS-FETs | |
11 | BF1215 |
NXP |
Dual N-channel dual gate MOSFET | |
12 | BF1216 |
NXP |
Dual N-channel dual gate MOSFET |