BDT95F - INCHANGE

BDT95F Silicon NPN Power Transistor

·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F ·Complement to Type BDT92F/94F/96F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applic.

Features

F/93F/95F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDT91F/93F/95F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT91F BDT93F IC= 30mA ; IB= 0 BDT95F VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 4A; VCE= 4V VCB= VCBOmax; IE= 0 VCB=1/2VCBOmax; IE= 0,TJ=.