·With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base vo.
e Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-100mA; IB=0 IC=-3 A;IB=-0.3 A IC=-10 A;IB=-3.3 A IC=-4A ; VCE=-4V VCB=-60V; IE=0 VCE=-30V; IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V 20 5 4 MHz MIN -60 -1.1 -3.0 -1.6 -0.1 -1.0 -1.0 200 TYP. MAX UNIT V V V V mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Spec.
·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT91 |
Magna |
(BDT91 - BDT95) Transistor | |
2 | BDT91 |
INCHANGE |
NPN Transistor | |
3 | BDT91F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | BDT92F |
INCHANGE |
PNP Transistor | |
5 | BDT93 |
Magna |
(BDT91 - BDT95) Transistor | |
6 | BDT93 |
INCHANGE |
NPN Transistor | |
7 | BDT93F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | BDT94 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | BDT94F |
INCHANGE |
PNP Transistor | |
10 | BDT95 |
INCHANGE |
NPN Transistor | |
11 | BDT95 |
Magna |
(BDT91 - BDT95) Transistor | |
12 | BDT95F |
INCHANGE |
Silicon NPN Power Transistor |