·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F; -100V(Min)- BDT96F ·Complement to Type BDT91F/93F/95F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching a.
ction to Case MAX UNIT 6.4 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92F/94F/96F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT92F BDT94F IC= -30mA ; IB= 0 BDT96F VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -4A; VCE= -4V VCB= VCBOmax; IE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT92 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
2 | BDT92 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BDT91 |
Magna |
(BDT91 - BDT95) Transistor | |
4 | BDT91 |
INCHANGE |
NPN Transistor | |
5 | BDT91F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | BDT93 |
Magna |
(BDT91 - BDT95) Transistor | |
7 | BDT93 |
INCHANGE |
NPN Transistor | |
8 | BDT93F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | BDT94 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | BDT94F |
INCHANGE |
PNP Transistor | |
11 | BDT95 |
INCHANGE |
NPN Transistor | |
12 | BDT95 |
Magna |
(BDT91 - BDT95) Transistor |