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·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement to Type BDT81F/83F/85F/87F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general.
ER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT82F/84F/86F/88F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT82F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT84F BDT86F IC= -30mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(on) BDT88F Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= -5A; IB= -0.5A Saturation IC= -7A; IB= -0.7A Base-Emitter On Voltage IC= -5A ; VCE= -4V ICES Collector Cutoff Curren.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT84 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | BDT84 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |
|
| 3 | BDT81 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BDT81 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 5 | BDT81F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BDT82 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT82 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |
|
| 8 | BDT82F |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 9 | BDT83 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BDT83 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 11 | BDT83F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | BDT85 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|