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·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F/84F/86F/88F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general ampl.
hermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 6 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT81F/83F/85F/87F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83F BDT85F IC= 30mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(on) BDT87F Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base-Emitter On Voltage IC= 5A; IB= 0.5A IC= 7A; IB= 0.7A IC= 5A ; VCE= 4V ICES Collector Cutoff Current VCE= VCBOmax; VBE=.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT81 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BDT81 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 3 | BDT82 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT82 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |
|
| 5 | BDT82F |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | BDT83 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BDT83 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |
|
| 8 | BDT83F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | BDT84 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | BDT84 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |
|
| 11 | BDT84F |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 12 | BDT85 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|