·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and.
rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website:www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83 BDT85 IC= 30mA; IB= 0 BDT87 VCE(sat)-1 VCE(sat)-2 VBE(on) ICES Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current IC= 5A; IB= 0.5A IC= 7A; IB= 0.7A IC= 5A ; VCE= 4V VCE.
NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT81F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BDT82 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
3 | BDT82 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR | |
4 | BDT82F |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | BDT83 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | BDT83 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR | |
7 | BDT83F |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | BDT84 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | BDT84 |
Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR | |
10 | BDT84F |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
11 | BDT85 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | BDT85 |
Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR |