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·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT64F .
ebsite：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64F -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64AF IC= -30mA ;IB=0 BDT64BF -80 -100 V BDT64CF -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.5 V VECF C-E Diode Forward Vo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT64C |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 2 | BDT64C |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 3 | BDT64 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 4 | BDT64 |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 5 | BDT64A |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | BDT64A |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 7 | BDT64AF |
INCHANGE |
Silicon PNP Darlington Power Transistor |
|
| 8 | BDT64B |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 9 | BDT64B |
Comset Semiconductors |
Silicon Darlington Power Transistor |
|
| 10 | BDT64BF |
INCHANGE |
Silicon PNP Darlington Power Transistor |
|
| 11 | BDT64F |
INCHANGE |
Silicon PNP Darlington Power Transistor |
|
| 12 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|