BDT64B - Inchange Semiconductor

BDT64B Silicon PNP Darlington Power Transistor

·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER .

Features

isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT64A BDT64B IC= -30mA ;IB=0 -80 -100 V BDT64C -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.5 V VECF-1 C-E Diode Forward Voltage IF= -5A -2.0 V VECF-2.