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SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symb.
T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max.
BDT64 - Inchange Semiconductor
·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | BDT60BF |
INCHANGE |
PNP Transistor |
|
| 12 | BDT60C |
Power Innovations Limited |
PNP Transistor |
|