·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Colle.
registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 3V ICBO Collector Cutoff Current VCB= 30V; IE= 0 VCB= 40V; IE= 0; TC= 150℃ ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V hFE-2 DC Curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT61 |
INCHANGE |
NPN Transistor | |
2 | BDT61 |
Bourns Electronic Solutions |
NPN Transistor | |
3 | BDT61A |
INCHANGE |
NPN Transistor | |
4 | BDT61A |
Bourns |
NPN Transistor | |
5 | BDT61AF |
INCHANGE |
NPN Transistor | |
6 | BDT61B |
INCHANGE |
NPN Transistor | |
7 | BDT61B |
Bourns |
NPN Transistor | |
8 | BDT61BF |
INCHANGE |
NPN Transistor | |
9 | BDT61C |
INCHANGE |
NPN Transistor | |
10 | BDT61C |
Bourns |
NPN Transistor | |
11 | BDT61CF |
INCHANGE |
NPN Transistor | |
12 | BDT60 |
Power Innovations Limited |
PNP Transistor |