BDT61AF - INCHANGE

BDT61AF NPN Transistor

·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60AF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Coll.

Features

is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 3V ICBO Collector Cutoff Current VCB= 30V; IE= 0 VCB= 40V; IE= 0; TC= 150℃ ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V hFE-2 DC Cu.