BDT61C - INCHANGE

BDT61C NPN Transistor

·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general .

Features

ERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 2.5 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistors BDT61/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT61 60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT61A BDT61B IC= 30mA; IB= 0 80 100 V BDT61C 120 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA 2.5 V VBE(on) ICBO Base-Emitt.