BDT42C - INCHANGE

BDT42C PNP Transistor

·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C ·Complement to Type BDT41/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching a.

Features

nce,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT42 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT42A BDT42B IC= -30mA; IB= 0 BDT42C VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) ICES Base-Emitter On Voltage Collector Cutoff Current IC= -6A ; VCE= -4V VCE= VCEOmax; VBE= 0 BDT42/A VCE= -30V; IB= 0 ICEO Coll.