BDT42AF - INCHANGE

BDT42AF PNP Transistor

·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF ·Complement to Type BDT41F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and sw.

Features

ermal Resistance,Junction to Case MAX UNIT 6.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT42F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT42F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT42AF BDT42BF IC= -30mA; IB= 0 BDT42CF VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 ICEO Collector Cutoff Current BDT42F/AF VCE= -30V; IB= .