·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching.
o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41A BDT 41B IC= 30mA; IB= 0 BDT 41C VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 BDT41/A VCE= 30V; IB= 0 ICEO Collector Cutoff Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDT41A |
INCHANGE |
NPN Transistor | |
2 | BDT41AF |
INCHANGE |
NPN Transistor | |
3 | BDT41B |
INCHANGE |
NPN Transistor | |
4 | BDT41BF |
INCHANGE |
NPN Transistor | |
5 | BDT41C |
INCHANGE |
NPN Transistor | |
6 | BDT41CF |
INCHANGE |
NPN Transistor | |
7 | BDT41F |
INCHANGE |
NPN Transistor | |
8 | BDT42 |
INCHANGE |
PNP Transistor | |
9 | BDT42A |
INCHANGE |
PNP Transistor | |
10 | BDT42AF |
INCHANGE |
PNP Transistor | |
11 | BDT42B |
INCHANGE |
PNP Transistor | |
12 | BDT42BF |
INCHANGE |
PNP Transistor |