BDT32 - INCHANGE

BDT32 PNP Transistor

·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C ·Complement to Type BDT31/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifi.

Features

AX Rth j-c Thermal Resistance,Junction to Case 3.12 Rth j-a Thermal Resistance,Junction to Ambient 70 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT32/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT32 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 32A BDT 32B IC= -30mA; IB= 0 BDT 32C VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A VBE(on) ICES Base-Emitter On Voltage Collector Cutoff Current IC= -3A ; VCE= -4V VCE= VCEOmax; VB.